Research of Cell Topology on Characteristics of 750V SiC MOSFETs-Reference-Cited by-同舟云学术

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Research of Cell Topology on Characteristics of 750V SiC MOSFETs

Published:2023-11-27 Issue: Volume: Page:53-56
ISSN:
Container-title:2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
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Author:

Huang Runhua¹,Zhang Yue¹,Liu Tao¹,Zhang Teng¹,Li Shiyan¹,Bai Song¹,Yang Yong¹,Li Yun¹,Zhao Zhifei¹

Affiliation:

1. Nanjing Electronic Devices Institute,State Key Laboratory of Wide Bandgap Semiconductor devices and integrated technology,Nanjing,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10399638/10399484/10399705.pdf?arnumber=10399705

Reference13 articles.

1. Design and Fabrication of 1.2kV/40m Ω 4H-SiC MOSFET

2. Design and fabrication of a 3.3 kV 4H-SiC MOSFET

3. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

4. 4.5kV SiC MOSFET with boron doped gate dielectric

5. Nitrogen Implantation to Improve Electron Channel Mobility in 4H-SiC MOSFET

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancing Characteristics of 1700-V SiC VDMOSFETs: Strategic Integration of Cell Design and Process Optimization;IEEE Transactions on Electron Devices;2024

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