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Design and fabrication of a 3.3 kV 4H-SiC MOSFET

  • Published:2015-09 Issue:9 Volume:36 Page:094002
  • ISSN:1674-4926
  • Container-title:Journal of Semiconductors
  • language:
  • Short-container-title:J. Semicond.

Author:

Huang Runhua,Tao Yonghong,Bai Song,Chen Gang,Wang Ling,Liu Ao,Wei Neng,Li Yun,Zhao Zhifei

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET;Solid State Phenomena;2024-08-22

2. A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance;Micromachines;2024-03-29

3. Research of Cell Topology on Characteristics of 750V SiC MOSFETs;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

4. Growth of 150 mm 4H-SiC Epilayers with Low Surface Roughness by a Hot-Wall Reactor on 4° off- Axis Substrates;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

5. Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching;Journal of Semiconductors;2022-10-01
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