Abnormal ${C}$ –${V}$ Hump Effect Induced by Hot Carriers in Gate Length-Dependent p-Type LTPS TFTs-Reference-Cited by-同舟云学术

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Abnormal ${C}$ –${V}$ Hump Effect Induced by Hot Carriers in Gate Length-Dependent p-Type LTPS TFTs

Published:2019-11 Issue:11 Volume:66 Page:4764-4767
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Huang Shin-Ping,Shih Yao-Kai,Chung Yu-Hua,Chen Wei-Han,Wang Terry Tai-Jui,Zhang Sheng-Dong^ORCID,Chang Ting-Chang^ORCID,Chen Po-Hsun^ORCID,Tsao Yu-Ching,Chen Hong-Chih^ORCID,Zheng Yu-Zhe,Chu Ann-Kuo,Shih Yu-Shan,Wang Yu-Xuan,Wu Chia-Chuan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8886611/08868107.pdf?arnumber=8868107

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Abnormal C–V Hump on Si₃N₄ MIS-HEMT With Mesa Isolation Under Negative Gate Bias Stress;IEEE Transactions on Electron Devices;2024-04

2. The Transition of Threshold Voltage Shift of Al₂O₃/Si₃N₄ AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC;IEEE Transactions on Electron Devices;2024-03

3. Self‐Alignment Embedded Thin‐Film Transistor with High Transparency and Optimized Performance;Advanced Materials Technologies;2022-08-05

4. Enhancing Hot-Carrier Reliability of Dual-Gate Low-Temperature Polysilicon TFTs by Increasing Lightly Doped Drain Length;IEEE Electron Device Letters;2020-10

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