On the minority charge storage for an epitaxial Schottky-barrier diode
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31878/01483093.pdf?arnumber=1483093
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Carrier-Storage-Enhanced Superjunction IGBT With Ultralow Loss and On-State Voltage;IEEE Electron Device Letters;2018-02
2. Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection;Applied Physics Letters;2016-01-25
3. Fast extraction of static parameters of Schottky diodes from forward I–V characteristic;Measurement;2005-03
4. Electrical characteristics of an epitaxial high barrier Schottky diode;International Journal of Electronics;2001-09
5. Characteristics of an epitaxial Schottky barrier diode for all levels of injection;Solid-State Electronics;2000-06
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