Characteristics of an epitaxial Schottky barrier diode for all levels of injection
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Minority carrier injection and charge storage in epitaxial Schottky barrier diodes
2. On the minority charge storage for an epitaxial Schottky-barrier diode
3. Schottky rectifiers on silicon using high barriers
4. Schottky barrier diode characteristics under high level injection
5. Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Determination of the Density Distribution of Interface States from High- and Low-Frequency Capacitance Characteristics of the Tin/Organic Pyronine-B/p-type Silicon Structure;ChemPhysChem;2002-08-16
2. Recent advances in Schottky barrier concepts;Materials Science and Engineering: R: Reports;2001-11
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