Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection-Reference-Cited by-同舟云学术

Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection

Published:2016-01-25 Issue:4 Volume:108 Page:043502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chava Venkata S. N.¹,Omar Sabih U.¹,Brown Gabriel¹,Shetu Shamaita S.¹,Andrews J.¹,Sudarshan T. S.¹,Chandrashekhar M. V. S.¹

Affiliation:

1. Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA

Funder

National Science Foundation (NSF)

Office of Naval Research (ONR)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4940385

Reference28 articles.

1. Wide-bandgap semiconductor ultraviolet photodetectors

2. Short-wavelength solar-blind detectors-status, prospects, and markets

3. Investigation of the Epitaxial Graphene/p-SiC Heterojunction

4. Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible

5. Bipolar-mode Schottky contact and applications to high-speed diodes

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