Theoretical study of multiquantum well avalanche photodiodes made from the GaInAs/AlInAs material system
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31957/01485917.pdf?arnumber=1485917
Cited by 46 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High field properties of electron transport in bulk zincblende In0.53Ga0.47As and In0.53Ga0.47Sb;Modern Physics Letters B;2015-04-20
2. Modeling of avalanche multiplication and excess noise factor in In0.52Al0.48As avalanche photodiodes using a simple Monte Carlo model;Journal of Applied Physics;2008-07
3. Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa(1−x)As measured by picosecond ultrasonics;Journal of Applied Physics;2006-11-15
4. Invited Review: Superlattice and multiquantum well avalanche photodetectors: physics, concepts and performance;Superlattices and Microstructures;2000-08
5. Effect of a deep-level trap on hole transport in In[sub 0.5]Al[sub 0.5]As/In[sub 0.5]Ga[sub 0.5]As metal–semiconductor–metal photodetectors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-07
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