Modeling of avalanche multiplication and excess noise factor in In0.52Al0.48As avalanche photodiodes using a simple Monte Carlo model
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2952003
Reference31 articles.
1. Impact ionization rates for electrons and holes in Al0.48In0.52As
2. Impact ionization rates in
3. Avalanche Multiplication in InAlAs
4. 10 Gbit/s high sensitivity, low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure
5. Gain-bandwidth characteristics of thin avalanche photodiodes
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