10 Gbit/s high sensitivity, low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20001421?crawler=true&mimetype=application/pdf
Reference10 articles.
1. Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz
2. Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product
3. Low excess noise characteristics in thin avalanche region GaAs diodes
4. InAlAs avalanche photodiodes with very thin multiplication layer of 0.1 [micro sign]m for high-speed and low-voltage-operation optical receiver
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