High field properties of electron transport in bulk zincblende In0.53Ga0.47As and In0.53Ga0.47Sb

Abstract

In this paper, electron transport properties in bulk zincblende In 0.53 Ga 0.47 As and In 0.53 Ga 0.47 Sb in high electric field are presented by using an ensemble Monte Carlo method. The steady state electron transport and transient situation in these two ternary semiconductors are reviewed and compared together by the three-valley model of conduction band. The results show that In 0.53 Ga 0.47 Sb has lower threshold field and higher drift velocity peak in comparison with In 0.53 Ga 0.47 As . Moreover, In 0.53 Ga 0.47 Sb has higher overshoot velocity and shorter time response in high electric field in comparison with In 0.53 Ga 0.47 As . However, overshoot relaxation time is equal for them in two applied electric fields.