Inverted-Type InGaAs Metal–Oxide–Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2 A/mm-Reference-Cited by-同舟云学术

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Inverted-Type InGaAs Metal–Oxide–Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2 A/mm

Published:2012-10-04 Issue:10 Volume:5 Page:104201
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Zhou Xiuju,Li Qiang,Tang Chak Wah,Lau Kei May

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=10/a=104201/pdf

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Intersubband effects on electron mobility in GaAs/ In_xGa_1-xAs Quantum well FET with asymmetric doping profiles;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07

2. Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current;ACS Nano;2022-11-29

3. LG = 20 nm High Performance GaAs Substrate Based Metamorphic Metal Oxide Semiconductor High Electron Mobility Transistor for Next Generation High Speed Low Power Applications;Journal of Nanoelectronics and Optoelectronics;2019-08-01

4. Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave Applications;Semiconductors;2018-12

5. Design Optimization of 10 nm Channel Length InGaAs Vertical Gate-All-Around Transistor (Nanowire);Advances in Intelligent Systems and Computing;2018-09-13

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