Reliability effects on MOS transistors due to hot-carrier injection-Reference-Cited by-同舟云学术

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Reliability effects on MOS transistors due to hot-carrier injection

Published:1985-02 Issue:2 Volume:32 Page:386-393
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kueing-Long Chen ,Saller S.A.,Groves I.A.,Scott D.B.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31924/01484700.pdf?arnumber=1484700

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