Comprehensive Study of Quasi-Ballistic Transport in High-$\kappa$/Metal Gate nMOSFETs-Reference-Cited by-同舟云学术

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Comprehensive Study of Quasi-Ballistic Transport in High-$\kappa$/Metal Gate nMOSFETs

Published:2011-11 Issue:11 Volume:32 Page:1474-1476
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Sagong Hyun Chul,Kang Chang Yong,Sohn Chang-Woo,Jeon Kanghoon,Jeong Eui-Young,Choi Do-Young,Baek Chang-Ki,Lee Jeong-Soo,Lee Jack C.,Jeong Yoon-Ha

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6056714/06026901.pdf?arnumber=6026901

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extraction of source/drain resistivity parameters optimized for double-gate FinFETs;Japanese Journal of Applied Physics;2015-01-29

2. RF and broadband noise investigation in High-k/Metal Gate 28-nm CMOS bulk transistor;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2014-01-06

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