RF and broadband noise investigation in High-k/Metal Gate 28-nm CMOS bulk transistor
Author:
Affiliation:
1. Institut d'Electronique de Microélectronique et de Nanotechnologie; Villeneuve d'Ascq Cedex 59652 France
2. STMicroelectronics; Crolles F-38926 France
Funder
ENIAC Joint Undertaking Contract ‘Mirandela’
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation
Reference16 articles.
1. Moore's law: past, present and future;Schaller;IEEE Spect,1997
2. The High-k solution;Bohr;IEEE Spect,2007
3. Tagro L Poulain L Lepilliet S Dormieu B Gloria D Scheer P Dambrine G Danneville F RF noise investigation in high-k/metal gate 28-nm CMOS transistors IEEE International Microwave Symposium 2012
4. VanDerVoorn P Agostinelli M Choi S Curello G Deshpande H El-Tanani MA Hafez W Jalan U Janbay L Kang M Koh K Komeyli K Lakdawala H Lin J Lindert N Mudanai S Park J Phoa K Rahman A Rizk J Rockford L Sacks G Soumyanath K Tashiro H Taylor S Tsai C Xu H Xu J Yang L Young I Yeh J Yip J Bai P Jan C A 32nm low power RF CMOS SOC technology featuring high-k/metal gate Symposium on VLSI Technology (VLSIT) 2010
5. Jan C-H Agostinelli M Deshpande H El-Tanani MA Hafez W Jalan U Janbay L Kang M Lakdawala H Lin J Lu Y-L Mudanai S Park J Rahman A Rizk J Shin W-K Soumyanath K Tashiro H Tsai C VanDerVoorn P Yeh J-Y Bai P RF CMOS technology scaling in High-k/metal Gate era for RF SoC (system-on-chip) applications IEEE International Electron Devices Meeting (IEDM) 2010
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