On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs-Reference-Cited by-同舟云学术

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On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs

Published:2011-07 Issue:7 Volume:32 Page:847-849
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Dai Chih-Hao,Chang Ting-Chang,Chu An-Kuo,Kuo Yuan-Jui,Jian Fu-Yen,Lo Wen-Hung,Ho Szu-Han,Chen Ching-En,Chung Wan-Lin,Shih Jou-Miao,Xia Guangrui,Cheng Osbert,Huang Cheng-Tung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5931087/05771040.pdf?arnumber=5771040

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Abnormal Recovery Phenomenon Induced by Hole Injection During Hot Carrier Degradation in SOI n-MOSFETs;IEEE Electron Device Letters;2017-07

2. Investigation of defect-induced abnormal body current in fin field-effect-transistors;Applied Physics Letters;2015-08-24

3. Physical and chemical mechanisms in oxide-based resistance random access memory;Nanoscale Research Letters;2015-03-12

4. Anomalous degradation behaviors under illuminated gate bias stress in a-Si:H thin film transistor;Thin Solid Films;2014-12

5. Investigation of temperature-dependent asymmetric degradation behavior induced by hot carrier effect in oxygen ambiance in In–Ga–Zn-O thin film transistors;Thin Solid Films;2014-12

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