Nonvolatile Memory Effect in a Au/Cu–ZnO/p-Si Type of Metal–Insulator–Semiconductor Structure-Reference-Cited by-同舟云学术

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Nonvolatile Memory Effect in a Au/Cu–ZnO/p-Si Type of Metal–Insulator–Semiconductor Structure

Published:2011-12 Issue:12 Volume:32 Page:1746-1748
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ghosh T.,Basak D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6079317/06059471.pdf?arnumber=6059471

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Light‐Assisted Resistive Switching Memory Device with Reduced SET/RESET Voltage Using Sol–Gel TiO 2 on Al‐Doped ZnO Electrode;physica status solidi (a);2021-05-19

2. Impact of barrier layer on HfO2-based conductive bridge random access memory;Applied Physics Letters;2019-03-04

3. Role of interfacial oxide layer thickness and annealing temperature on structural and electronic properties of Al/Ta2O5/TiO2/Si metal–insulator–semiconductor structure;Journal of Alloys and Compounds;2017-09

4. Resistive Switching Properties of Highly Transparent SnO2:Fe;Journal of Nano- and Electronic Physics;2017

5. Fabrication and Characterization of Floating Memory Devices Based on Thiolate-Protected Gold Nanoclusters;The Journal of Physical Chemistry C;2016-11-16

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