Role of interfacial oxide layer thickness and annealing temperature on structural and electronic properties of Al/Ta2O5/TiO2/Si metal–insulator–semiconductor structure

Author:

Chandra Sekhar M.,Nanda Kumar Reddy Nallabala,Akkera Harish Sharma,Purusottam Reddy B.,Rajendar V.,Uthanna S.,Park Si-Hyun

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

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