A DC-75-GHz Bandwidth and 54 $\text {dB}\Omega $ Gain TIA With 10.9 pA/ $\sqrt {\mathrm {Hz}} $ in 130-nm SiGe:C BiCMOS
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/8249514/08194885.pdf?arnumber=8194885
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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2. Analog/mmWave Circuit Demonstrations in State-of-the-Art SiGe BiCMOS Process for 5G and Optical Transceivers;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
3. A 128 Gb/s, 11.2 mW Single-Ended PAM4 Linear TIA With 2.7 μArms Input Noise in 22 nm FinFET CMOS;IEEE Journal of Solid-State Circuits;2022-05
4. A 4 × 10 Gb/s Adaptive Optical Receiver Utilizing Current-Reuse and Crosstalk-Remove;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2021-12
5. Ultrawideband LNA 1960–2019: Review;IET Circuits, Devices & Systems;2021-04-22
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