An Ultra-Broadband GaN Doherty Amplifier with 83% of Fractional Bandwidth
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/6945917/06906311.pdf?arnumber=6906311
Cited by 36 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Switchless Class-G Power Amplifiers: Generic Theory and Design Methodology Using Packaged Transistors;IEEE Transactions on Microwave Theory and Techniques;2024-08
2. Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model;Micromachines;2024-03-13
3. Design of a Dual-Band Doherty Power Amplifier Using Single-Loop Network;IEEE Transactions on Microwave Theory and Techniques;2024
4. A Stacked Doherty Power Amplifier For Ka-Band Space Applications;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08
5. Single-Input Broadband Hybrid Doherty Power Amplifiers Design Relying on a Phase Sliding-Mode of the Load Modulation Scheme;IEEE Transactions on Microwave Theory and Techniques;2023-04
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