Effect of High Film Stress of Mo Source and Drain Electrodes on Electrical Characteristics of Al Doped InZnSnO TFTs-Reference-Cited by-同舟云学术

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Effect of High Film Stress of Mo Source and Drain Electrodes on Electrical Characteristics of Al Doped InZnSnO TFTs

Published:2019-11 Issue:11 Volume:40 Page:1760-1763
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Bae Jaehan^ORCID,Ma Boo Soo,Jeon Gukjin^ORCID,Jeong Wooseok,Je Chang Han,Kim Taek-Soo^ORCID,Park Sang-Hee Ko

Funder

Wearable Platform Materials Technology Center

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

National Research Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8886609/08844072.pdf?arnumber=8844072

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors;Micromachines;2022-11-02

2. Electrical characteristics of tungsten-doped InZnSnO thin film transistors by RF magnetron sputtering;Journal of Vacuum Science & Technology B;2022-05

3. Highly-stable flexible pressure sensor using piezoelectric polymer film on metal oxide TFT;RSC Advances;2022

4. P‐1.11: Effects of Source and Drain Contacts on Electrical Performance of Oxide Thin‐Film Transistors;SID Symposium Digest of Technical Papers;2021-08

5. Effects of Target Quality on Electrical Performance and Stability of In-Sn-Zn-O Thin-Film Transistors;IEEE Electron Device Letters;2021-04

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