Affiliation:
1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
Abstract
A bottom-gate tungsten-doped InZnSnO (IZTO:W) thin film transistor (TFT) is fabricated. The IZTO:W thin film is deposited by radio-frequency magnetron sputtering at room temperature. The x-ray diffraction result indicates that the film is amorphous. The transmittance spectrum shows that the film is transparent with an average optical transmittance over 80% in the visible range. The TFT shows excellent performances with a saturation mobility ( μSAT) of 41.0 cm2/V s, a threshold voltage ( VTH) of 2.4 V, a subthreshold swing of 0.5 V/decade, and a current on/off ratio ( ION /IOFF) of 6.8 × 108. The gate bias stress stability and stress recovery of the TFT are investigated. The threshold voltage shifts (Δ VTH) under negative and positive bias stress for 1 h are −9.4 and 10.0 V, respectively. After the stress is removed, Δ VTH under negative and positive stress recovery for 1 h are 7.0 and −3.6 V, respectively.
Funder
Fundamental Research Funds for the Central Universities
National Natural Science Foundation of China
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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