Thermal Stability and Sn Segregation of Low-Resistance Ti/p+-Ge0.95Sn0.05 Contact-Reference-Cited by-同舟云学术

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Thermal Stability and Sn Segregation of Low-Resistance Ti/p+-Ge0.95Sn0.05 Contact

Published:2019-10 Issue:10 Volume:40 Page:1575-1578
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wu Ying^ORCID,Xu Haiwen,Han Kaizhen^ORCID,Gong Xiao^ORCID

Funder

Singapore Ministry of Education (MOE) Academic Research Fund

Ministry of Education (MOE) Tier 2

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8848628/08787568.pdf?arnumber=8787568

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MBE growth of Ge_1−xSn _x devices with intrinsic disorder;Journal of Physics D: Applied Physics;2024-06-28

2. Advances in GeSn alloys for MIR applications;Photonics and Nanostructures - Fundamentals and Applications;2024-02

3. Use of Nanosecond Laser Annealing for Thermally Stable Ni(GeSn) Alloys;IEEE Journal of the Electron Devices Society;2023

4. Impact of Sn on the Ti/Ge solid-state reaction: Phase formation sequence, morphological and electrical properties;Microelectronic Engineering;2022-01

5. Review of Si-Based GeSn CVD Growth and Optoelectronic Applications;Nanomaterials;2021-09-29

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