A comprehensive variability study of doped HfO2 FeFET for memory applications
Author:
Affiliation:
1. imec,Leuven,Belgium,3001
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9779263/9779243/09779294.pdf?arnumber=9779294
Reference19 articles.
1. Revealing Antiferroelectric Switching and Ferroelectric Wakeup in Hafnia by Advanced Piezoresponse Force Microscopy
2. Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P–V and I–V in HfO₂-Based Ferroelectric FET
3. Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories
4. High Speed Memory Operation in Channel-Last, Back-gated Ferroelectric Transistors
5. Coupled atomistic 3D process/device simulation considering both line-edge roughness and random-discrete-dopant effects
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1. Understanding of polarization reversal and charge trapping under imprint in HfO2-FeFET by charge component analysis;Japanese Journal of Applied Physics;2024-03-18
2. Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory;Nanomaterials;2023-07-19
3. Variability in Planar FeFETs—Channel Percolation Impact;IEEE Transactions on Electron Devices;2023-07
4. Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors;IEEE Transactions on Electron Devices;2023-04
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