Author:
Sexton F.W.,Fleetwood D.M.,Shaneyfelt M.R.,Dodd P.E.,Hash G.L.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Cited by
76 articles.
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1. Total ionizing dose effects of
60
Co-γ ray radiation on SiC MOSFETs with different gate oxide thickness;Radiation Effects and Defects in Solids;2023-08-03
2. SEGR and SEB Analysis of SJVDMOS using SiO2/Si3N4 as Gate Dielectric with Buffer layer;2023 2nd International Conference on Paradigm Shifts in Communications Embedded Systems, Machine Learning and Signal Processing (PCEMS);2023-04-05
3. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of Mosfets;Differentiated Layout Styles for MOSFETs;2023
4. Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices;Applied Physics Letters;2022-08-15
5. SEGR Analysis of Super Junction VDMOS using HfO2 as Gate Dielectric;2022 Second International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT);2022-04-21