Total ionizing dose effects of <sup>60</sup> Co-γ ray radiation on SiC MOSFETs with different gate oxide thickness-Reference-Cited by-同舟云学术

Total ionizing dose effects of ⁶⁰ Co-γ ray radiation on SiC MOSFETs with different gate oxide thickness

Published:2023-08-03 Issue:9-10 Volume:178 Page:1201-1210
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Feng Haonan¹²³^ORCID,Liang Xiaowen¹²³,Sun Jing¹²,Feng Jie¹²,Wei Ying¹²,Zhang Teng⁴,Pu Xiaojuan¹²³,Zhang Dan¹²³,Xiang Yutang¹²³,Li Yudong¹²,Yu Xuefeng¹²,Guo Qi¹²

Affiliation:

1. Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, People’s Republic of China

2. Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, People’s Republic of China

3. University of Chinese Academy of Sciences, Beijing, People’s Republic of China

4. State Key Laboratory of Wide-Band Gap Semicond, Nanjing Electronic Devices Institute, Nanjing, People’s Republic of China

Funder

National Natural Science Foundation of China

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2023.2240934

Reference19 articles.

1. Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies

2. Reliability studies of SiC vertical power MOSFETs

3. Application of Total Ionizing Dose Radiation Test Standards to SiC MOSFETs

4. Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes

5. Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs