Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes-Reference-Cited by-同舟云学术

Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes

Published:2023-04 Issue:4 Volume:70 Page:394-400
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Sengupta Arijit¹^ORCID,Ball Dennis R.¹,Witulski Arthur F.¹^ORCID,Zhang En Xia¹^ORCID,Schrimpf Ronald D.¹^ORCID,Galloway Kenneth F.¹^ORCID,Reed Robert A.¹^ORCID,Alles Michael L.¹,McCurdy Michael W.¹,Sternberg Andrew L.¹^ORCID,Johnson Robert A.²^ORCID,Howell Mick E.¹^ORCID,Osheroff Jason M.³^ORCID,Hutson John M.⁴^ORCID

Affiliation:

1. Electrical and Computer Engineering Department and the Institute for Space and Defense Electronics, Vanderbilt University, Nashville, TN, USA

2. Electrical Engineering and Computer Science Department, Vanderbilt University, Nashville, TN, USA

3. NASA/GSFC, Greenbelt, MD, USA

4. Electrical and Computer Engineering Department, Lipscomb University, Nashville, TN, USA

Funder

National Aeronautics and Space Administration (NASA) Lunar Surface Technology Research (LuSTR) Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/10103954/10036039.pdf?arnumber=10036039

Reference27 articles.

1. Vanderbilt Pelletron - Low Energy Protons and Other Ions for Radiation Effects on Electronics

2. Determination of neutron irradiation temperatures of SiC using electrical resistivity method

3. Single-Event Burnout Mechanisms in SiC Power MOSFETs

4. Reliability studies of SiC vertical power MOSFETs

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