Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits-Reference-Cited by-同舟云学术

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Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits

Published:2013-12 Issue:12 Volume:49 Page:5620-5628
ISSN:0018-9464
Container-title:IEEE Transactions on Magnetics
language:
Short-container-title:IEEE Trans. Magn.

Author:

Mahmoudi Hiwa,Windbacher Thomas,Sverdlov Viktor,Selberherr Siegfried

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/20/6671486/06579774.pdf?arnumber=6579774

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improving Reliability of STT-MRAM-Based Smart Material Implication;2024 IEEE 24th International Conference on Nanotechnology (NANO);2024-07-08

2. SIMPLY+: A Reliable STT-MRAM-Based Smart Material Implication Architecture for In-Memory Computing;IEEE Access;2023

3. Spin-Based Devices for Digital Applications;Springer Handbook of Semiconductor Devices;2022-11-11

4. Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing;Solid-State Electronics;2022-08

5. Stateful implication logic based on perpendicular magnetic tunnel junctions;Science China Information Sciences;2021-11-10

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