Robustness in short-circuit mode: Benchmarking of 600V GaN HEMTs with power Si and SiC MOSFETs-Reference-Cited by-同舟云学术

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Robustness in short-circuit mode: Benchmarking of 600V GaN HEMTs with power Si and SiC MOSFETs

Published:2016-09 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE Energy Conversion Congress and Exposition (ECCE)
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Author:

Badawi Nasser,Awwad Abdullah Eial,Dieckerhoff Sibylle

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7835398/7854636/07855410.pdf?arnumber=7855410

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure;IEEE Transactions on Electron Devices;2024-04

2. Highly Reliable Short-Circuit Protection Circuits for Gallium Nitride High-Electron-Mobility Transistors;Electronics;2024-03-25

3. Design and Evaluation of High-Speed Overcurrent and Short-Circuit Detection Circuits With High Noise Margin for WBG Power Semiconductor Devices;IEEE Access;2024

4. Stability, Reliability, and Robustness of GaN Power Devices: A Review;IEEE Transactions on Power Electronics;2023-07

5. Short Circuits in GaN HEMTs: Test Bench Setup and Characterization;IEEE Transactions on Power Electronics;2023-03

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