Design considerations and development of gate driver for 15 kV SiC IGBT

Author:

Kadavelugu Arun,Bhattacharya Subhashish

Publisher

IEEE

Cited by 39 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A Review of Isolated Bidirectional DC-DC Converters for Data Centers;Chinese Journal of Electrical Engineering;2023-12

2. Coupling Capacitance Characteristics and Design Optimization Method of CT-Type Isolated Power Supply for High-voltage SiC Devices;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

3. A 3.3 kV Silicon Carbide MOSFET Based Building Block for Medium-Voltage Ultra-Fast DC Chargers;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19

4. Design and Multiobjective Optimization of an Auxiliary Wireless Power Transfer Converter in Medium-Voltage Modular Conversion Systems;IEEE Transactions on Power Electronics;2022-08

5. Compensation of p-type doping in Al-doped 4H-SiC;Journal of Applied Physics;2022-05-14

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