A 3.3 kV Silicon Carbide MOSFET Based Building Block for Medium-Voltage Ultra-Fast DC Chargers-Reference-Cited by-同舟云学术

A 3.3 kV Silicon Carbide MOSFET Based Building Block for Medium-Voltage Ultra-Fast DC Chargers

Published:2023-03-19 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Ismail Ahmed H.¹,Cao Hui¹,Al-Hmoud Ahmad¹,Ma Zhuxuan¹,Du Xinyuan¹,Zhao Yue¹

Affiliation:

1. University of Arkansas,Power Electronic Systems Laboratory at Arkansas (PESLA),Department of Electrical Engineering,Fayetteville,AR,USA,72701

Funder

NSF

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10131044/10130846/10131643.pdf?arnumber=10131643

Reference25 articles.

1. 3.3kV All SiC Module with 1st Generation Trench Gate SiC MOSFETs for Traction Inverters;sekino;PCIM Europe digital days 2020 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,2020

2. 3.3 kV All SiC MOSFET Module with Schottky Barrier Diode Embedded SiC MOSFET;kono;PCIM Europe digital days 2021 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,0

3. LinPak SiC MOSFET phase-leg module;5SFG 1000X330100 datasheet,2020

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