A turn-off delay time measurement and junction temperature estimation method for IGBT
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7922447/7930596/07931019.pdf?arnumber=7931019
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Thermo-sensitive electrical parameters of high-power IGBTs based on gate-emitter voltage measurement during switching delay intervals;Microelectronics Reliability;2023-12
2. A Junction Temperature and Package Aging Decoupling Evaluating Method for SiC MOSFETs Based on the Turn-on Drain-Source Current Overshoot;IEEE Transactions on Power Electronics;2023-11
3. Online Monitoring Method of P-I-N Diode Temperature Based on Maximum Recovery Current;IEEE Transactions on Power Electronics;2023-06
4. Analysis of Probe Influences on TSEP Measurement Fidelity of Fast Switching SiC MOSFETs;Lecture Notes in Electrical Engineering;2023
5. Measurement method of the IGBT chip temperature fluctuation based on electrothermal model derivation;Microelectronics Journal;2022-12
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