Measurement method of the IGBT chip temperature fluctuation based on electrothermal model derivation-Reference-Cited by-同舟云学术

Measurement method of the IGBT chip temperature fluctuation based on electrothermal model derivation

Published:2022-12 Issue: Volume:130 Page:105613
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Li Lie^ORCID,He Yigang,Du Bolun

Publisher

Elsevier BV

Subject

General Engineering

Reference28 articles.

1. The influence and application of bond wires failure on electrothermal characteristics of IGBT module;Chen,2021

2. Experimental investigation on the effects of narrow junction temperature cycles on die-attach solder layer in an IGBT module;Lai,2017

3. Comparison of IGBT junction temperature measurement and estimation methods-a review;Sathik,2017

4. Comparison of junction temperature evaluations in a power IGBT module using an IR camera and three thermo-sensitive electrical parameters;Dupont,2012

5. Temperature measurements of semiconductor devices - a review;Blackburn,2004

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