A Junction Temperature and Package Aging Decoupling Evaluating Method for SiC MOSFETs Based on the Turn-on Drain-Source Current Overshoot
Author:
Affiliation:
1. Department of Electrical Engineering, Tsinghua University, Beijing, China
Funder
National Key R&D Program of China
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10261409/10226274.pdf?arnumber=10226274
Reference37 articles.
1. Junction temperature estimation of SiC MOSFETs based on Extended Kalman Filtering
2. Online High-Power P-i-N Diode Chip Temperature Extraction and Prediction Method With Maximum Recovery Current di/dt
3. Junction temperature estimation in IGBT power modules based on Kalman filter
4. A High-Sensitivity Online Junction Temperature Monitoring Method for SiC mosfets Based on the Turn-on Drain–Source Current Overshoot
5. High power IGBT modules: thermal fatigue resistance evaluation of the solder joints
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1. Parameter Correction Method of Vce(on)-Based Junction Temperature Estimation Model Based on Bonding Wire Fatigue;IEEE Journal of Emerging and Selected Topics in Power Electronics;2024-08
2. Comparative Study on High-temperature Electrical Properties of 1.2 kV SiC MOSFET and JBS-integrated MOSFET;IEEE Transactions on Power Electronics;2023
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