Opportunities and design considerations of GaN HEMTs in ZVS applications
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/8336027/8340970/08341117.pdf?arnumber=8341117
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. An Improved GHA-Enabled Steady State Model-Derived Semiconductor Loss Optimization for a Three-Port C3L3 Resonant Converter;IEEE Transactions on Power Electronics;2024-06
2. Design and Transient Analysis of a 650 V/150 A GaN Power Modules With Integrated Bias Power and Gate-Drive Circuit;IEEE Transactions on Components, Packaging and Manufacturing Technology;2024-03
3. Fast Transient DC-Bus Dynamics in GaN-based PFCs: Dual-Loop Geometric Control;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25
4. Optimized Air-Gap Configuration for An Integrated Coupled Inductor with Lower Height and Reduced Core/Winding Losses;IEEE Transactions on Industry Applications;2024
5. High-frequency Full-bridge 48V DC-5V DC LLC Resonant Converter with AlGaN/GaN HEMTs;2023 5th International Conference on Electrical Engineering and Control Technologies (CEECT);2023-12-15
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