Design and Transient Analysis of a 650 V/150 A GaN Power Modules With Integrated Bias Power and Gate-Drive Circuit-Reference-Cited by-同舟云学术

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Design and Transient Analysis of a 650 V/150 A GaN Power Modules With Integrated Bias Power and Gate-Drive Circuit

Published:2024-03 Issue:3 Volume:14 Page:417-427
ISSN:2156-3950
Container-title:IEEE Transactions on Components, Packaging and Manufacturing Technology
language:
Short-container-title:IEEE Trans. Compon., Packag. Manufact. Technol.

Author:

Zhu Liyan¹^ORCID,Yan Yu²^ORCID,Bai Hua³^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, USA

2. Analog Devices Inc., Santa Clara County, San Jose, CA, USA

3. Department of Electrical Engineering and Computer Science, The University of Tennessee, Knoxville, TN, USA

Funder

Office of Energy Efficiency and Renewable Energy (EERE), U.S. Department of Energy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/5503870/10500445/10453043.pdf?arnumber=10453043

Reference30 articles.

1. GaN HEMT-Based >1-GHz Speed Low-Side Gate Driver and Switch Monolithic Process for 865-MHz Power Conversion Applications

2. GaN-Based MHz Single Phase Inverter with a High Efficiency Hybrid TCM Control Method

3. Applying Variable-Switching-Frequency Variable-Phase-Shift Control and E-Mode GaN HEMTs to an Indirect Matrix Converter-Based EV Battery Charger

4. Performance degradation of GaN field-effect transistors due to thermal boundary resistance at GaN/substrate interface;Turitsyna;Electron. Lett.,2005

5. Thermal analysis and validation of packaging for 100W and higher GaN MMIC power amplifiers

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