Normally-off GaN-on-Si multi-chip module boost converter with 96% efficiency and low gate and drain overshoot-Reference-Cited by-同舟云学术

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Normally-off GaN-on-Si multi-chip module boost converter with 96% efficiency and low gate and drain overshoot

Published:2014-03 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014
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Author:

Hughes Brian,Lazar James,Hulsey Stephen,Musni Marcel,Zehnder Daniel,Garrido Austin,Khanna Raghav,Chu Rongming,Khalil Sameh,Boutros Karim

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6784523/6803270/06803352.pdf?arnumber=6803352

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analyzing E-Mode p-Channel GaN H-FETs Using an Analytic Physics-Based Compact Model;IEEE Transactions on Electron Devices;2024-03

2. A Gallium Nitride Integrated Power Module with Ultra-low Parasitic Inductances and Thermal Resistance;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

3. A GaN HEMT Integrated Power Module with Silver Sintering Processes;2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS);2023-11-10

4. GaN-HEMT Power Module Structure with Single-sided and Double-sided Aluminum-Clad Printed-Circuit Boards for Small Power Loop Inductance and High Cooling Performance;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

5. Power Module Design for GaN Transistors Enabling High Switching Speed in Multi‐Kilowatt Applications;Energy Technology;2023-07-20

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