A Gallium Nitride Integrated Power Module with Ultra-low Parasitic Inductances and Thermal Resistance-Reference-Cited by-同舟云学术

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A Gallium Nitride Integrated Power Module with Ultra-low Parasitic Inductances and Thermal Resistance

Published:2024-02-25 Issue: Volume: Page:175-180
ISSN:
Container-title:2024 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Dong Zezheng¹,Yang Jinxu¹,Fan Yinxiang²,Yan Haidong¹,Wu Xinke¹

Affiliation:

1. College of Electrical Engineering Zhejiang University Key Laboratory of Power Semiconductor Materials and Devices of Zhejiang Province & Institute of Advanced Semiconductors,ZJU-Hangzhou Global Scientific and Technological Innovation Center,Hangzhou,China

2. Guilin University of Electronic Technology,School of Mechanical and Electrical Engineering,Guilin,China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10509012/10509018/10509221.pdf?arnumber=10509221

Reference15 articles.

1. Power GaN 2023;Intelligence,2023

2. The Sustained Oscillation Modeling and Its Quantitative Suppression Methodology for GaN Devices

3. A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices

4. A Comprehensive Investigation on Short-Circuit Oscillation of p-GaN HEMTs

5. GN011 Soldering Recommendations for GaNPX® and PDFN Packaged Devices

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