Author:
Breun Sascha,Schrotz Albert-Marcel,Dietz Marco,Issakov Vadim,Weigel Robert
Funder
Federal Ministry of Education and Research (BMBF)
Reference10 articles.
1. Fully Integrated Single-Chip 305–375-GHz Transceiver With On-Chip Antennas in SiGe BiCMOS
2. A Dual-Core 60 GHz Push-Push VCO with Second Harmonic Extraction by Mode Separation
3. A 250-310 GHz Power Amplifier with 15-dB Peak Gain in 130-nm SiGe BiCMOS Process for Terahertz Wireless System;li;Tthz,2021
4. Active 220-and 325–GHz frequency multiplier chains in an SiGe HBT technology;oejefors;TMTT,2011
5. A Study of SiGe HBT Signal Sources in the 220–330-GHz Range
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献