Performance Comparison of 2D Mono-Elemental (X-enes) Armchair Nanoribbon Schottky Barrier Field Effect Transistors
Author:
Affiliation:
1. Centre for VLSI and Nanotechnology, Visvesvaraya National Institute of Technology, Nagpur, India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/7729/10368312/10517477.pdf?arnumber=10517477
Reference35 articles.
1. The 2021 quantum materials roadmap
2. 2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope
3. Two-dimensional semiconductors for transistors
4. 2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI
5. Graphene Nanoribbon FETs: Technology Exploration for Performance and Reliability
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