Thermoelectric Cooling Read for Resolving Read Disturb With Inrush Current Issue in OTS-PRAM
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Computer Science Applications
Link
http://xplorestaging.ieee.org/ielx7/7729/8599030/08693910.pdf?arnumber=8693910
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Read Disturbance in Cross-Point Phase-Change Memory Arrays—Part II: Array Simulations Considering External Currents;IEEE Transactions on Electron Devices;2023-02
2. Correlation between resistive switching characteristics and density of traps observed in Zr3N2 resistive switching memory devices with TiN barrier electrode;Ceramics International;2022-07
3. A Discharge-Path-Based Sensing Circuit With OTS Snapback Current Protection for Phase Change Memories;IEEE Access;2022
4. Adaptive Sensing Voltage Modulation Technique in Cross-Point OTS-PRAM;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2021-04
5. A Sneak Current Compensation Scheme With Offset Cancellation Sensing Circuit for ReRAM-Based Cross-Point Memory Array;IEEE Transactions on Circuits and Systems I: Regular Papers;2021
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