Correlation between resistive switching characteristics and density of traps observed in Zr3N2 resistive switching memory devices with TiN barrier electrode-Reference-Cited by-同舟云学术

Correlation between resistive switching characteristics and density of traps observed in Zr3N2 resistive switching memory devices with TiN barrier electrode

Published:2022-07 Issue:14 Volume:48 Page:20478-20484
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Doowon Lee,Dongjoo Bae,Sungho Kim,Kim Hee-Dong^ORCID

Funder

National Research Foundation of Korea

Ministry of Education

Ministry of Trade, Industry and Energy

Korea Institute for Advancement of Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

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