Covered Source–Channel Tunnel Field-Effect Transistors With Trench Gate Structures
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Computer Science Applications
Link
http://xplorestaging.ieee.org/ielx7/7729/8599030/08554273.pdf?arnumber=8554273
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Current Status and Future Perspectives of Tunnel Field Effect Transistors for Low Power Switching Applications;Lecture Notes in Electrical Engineering;2023-09-03
2. A Review on Role of Epitaxial Engineering in Improving the Drive Current and Subthreshold Swing in Area Scaled Tunnel FETs;2023 International Conference on Computer, Electronics & Electrical Engineering & their Applications (IC2E3);2023-06-08
3. A Comprehensive Review on the Single Gate, Double Gate, Tri-Gate, and Heterojunction Tunnel FET for Future Generation Devices;Silicon;2022-10-27
4. A Review of Tunnel Field-Effect Transistors for Improved ON-State Behaviour;Silicon;2022-07-23
5. Temperature Influence on Dielectric Tunnel FET Characterization and Subthreshold Characterization;Silicon;2022-04-13
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