SiC MOSFET Aging Detection Based on Miller Plateau Voltage Sensing-Reference-Cited by-同舟云学术

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SiC MOSFET Aging Detection Based on Miller Plateau Voltage Sensing

Published:2019-06 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE Transportation Electrification Conference and Expo (ITEC)
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Author:

Pu Shi,Yang Fei,Ugur Enes,Xu Chi,Akin Bilal

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8784031/8790446/08790553.pdf?arnumber=8790553

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Noncontact SiC MOSFET Switching Time Monitoring in DC–DC Converter Using Switching Oscillation Amplitude Feature;IEEE Transactions on Power Electronics;2024-08

2. On-Line Digital Fine Monitoring of SiC MOSFET Gate-Oxide Health: A Dual-Channel Gate Driving Approach;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

3. An Online Gate Oxide Degradation Monitoring Method for SiC Mosfets Based on Turn-On Gate Voltage Filtering;IEEE Transactions on Power Electronics;2024-05

4. Real‐time monitoring and ageing detection algorithm design with application on SiC‐based automotive power drive system;IET Power Electronics;2024-03-15

5. A Comprehensive Overview of Reliability Assessment Strategies and Testing of Power Electronics Converters;IEEE Open Journal of Power Electronics;2024

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