Ultrafast UV AlGaN Metal–Semiconductor–Metal Photodetector With a Response Time Below 25 ps-Reference-Cited by-同舟云学术

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Ultrafast UV AlGaN Metal–Semiconductor–Metal Photodetector With a Response Time Below 25 ps

Published:2020-06 Issue:3 Volume:56 Page:1-7
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Zhao Yiming,Donaldson William R.^ORCID

Funder

National Nuclear Security Administration

University of Rochester

New York State Energy Research and Development Authority

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

https://ieeexplore.ieee.org/ielam/3/9042929/9037242-aam.pdf

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. KOH Wet Etching Ga-Polar AlGaN Epilayer for Ultraviolet B Photodetection With Low Dark Current and High Sensitivity;IEEE Sensors Journal;2024-05-15

3. A comparative study of AlGaN and BAlGaN based ultraviolet quantum well-based light emitting diodes;Optical and Quantum Electronics;2024-02-09

4. High-Performance Ultraviolet Photodetector Arrays Based on Recessed-Gate HEMT with a Buried p-GaN Layer;ACS Applied Electronic Materials;2024-02-02

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