Impact of field cycling on HfO2 based non-volatile memory devices-Reference-Cited by-同舟云学术

Impact of field cycling on HfO2 based non-volatile memory devices

Published:2016-09 Issue: Volume: Page:
ISSN:
Container-title:2016 46th European Solid-State Device Research Conference (ESSDERC)
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Author:

Schroeder U.¹,Pesic M.¹,Schenk T.¹,Mulaosmanovic H.¹,Slesazeck S.¹,Ocker J.¹,Richter C.¹,Yurchuk E.¹,Khullar K.¹,Muller J.²,Polakowski P.²,Grimley E. D.³,LeBeau J. M.³,Flachowsky S.⁴,Jansen S.⁴,Kolodinski S.⁴,van Bentum R.⁴,Kersch A.⁵,Kunneth C.⁵,Mikolajick T.¹

Affiliation:

1. NaMLab gGmbH, 01197 Dresden, Germany

2. Fraunhofer IPMS-CNT, 01109 Dresden, Germany

3. North Carolina State University, Raleigh, 27695, USA

4. GLOBALFOUNDRIES, 01109 Dresden, Germany

5. Munich UAS, 80335, Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7584557/7598672/07599662.pdf?arnumber=7599662

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