Optimizing Annealing Process for Ferroelectric Y‐Doped HfO 2 Thin Films by All‐Inorganic Aqueous Precursor Solution-Reference-Cited by-同舟云学术

Optimizing Annealing Process for Ferroelectric Y‐Doped HfO 2 Thin Films by All‐Inorganic Aqueous Precursor Solution

Published:2021-01-06 Issue:2 Volume:7 Page:2000585
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Wang Jingjing¹,Zhou Dayu¹^ORCID,Dong Wei¹,Yao Yifan¹,Sun Nana¹,Ali Faizan¹,Hou Xiaoduo¹,Liu Feng²

Affiliation:

1. J. Wang, D. Zhou, W. Dong, Y. Yao, N, Sun, F. Ali, X. Hou Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education) School of Materials Science and Engineering Dalian University of Technology Dalian 116024 China

2. F Liu Instrumental Analysis & Research Center Dalian University of Technology Panjin Campus Panjin 124221 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000585

Reference48 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects