Impact of fast-recovering NBTI degradation on stability of large-scale SRAM arrays

Author:

Drapatz Stefan,Hofmann Karl,Georgakos Georg,Schmitt-Landsiedel Doris

Publisher

IEEE

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Fault Injection Model of SRAM Memory Circuit Based on Hybrid Modeling;2022 5th International Conference on Circuits, Systems and Simulation (ICCSS);2022-05-13

2. Resilience and yield of flip‐flops in future CMOS technologies under process variations and aging;IET Circuits, Devices & Systems;2014-01

3. On-Chip Silicon Odometers for Circuit Aging Characterization;Bias Temperature Instability for Devices and Circuits;2013-09-10

4. Variability in Nanometer Technologies and Impact on SRAM;Nanometer Variation-Tolerant SRAM;2012-09-26

5. An SRAM Reliability Test Macro for Fully Automated Statistical Measurements of ${\rm V} _{\rm MIN}$ Degradation;IEEE Transactions on Circuits and Systems I: Regular Papers;2012-03

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