Direct-coupled FET logic circuits on InP-Reference-Cited by-同舟云学术

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Direct-coupled FET logic circuits on InP

Published:1991-03 Issue:3 Volume:12 Page:98-100
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Feuer M.D.,He Y.,Shunk S.C.,Huang J.-H.,Vang T.A.,Brown-Goebeler K.F.,Chang T.-Y.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/2524/00075724.pdf?arnumber=75724

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs- and InP-based high electron mobility transistors;Reference Module in Materials Science and Materials Engineering;2024

2. Monolithic Dual-Gate E-Mode Device-Based NAND Logic Block for GaN MIS-HEMTs IC Platform;IEEE Journal of the Electron Devices Society;2023

3. Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs;Journal of Circuits, Systems and Computers;2019-12-01

4. GaAs- and InP-Based High-Electron-Mobility Transistors;Comprehensive Semiconductor Science and Technology;2011

5. A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}\hbox{/}\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ p-HEMTs;IEEE Transactions on Electron Devices;2008-07

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