Monolithic Dual-Gate E-Mode Device-Based NAND Logic Block for GaN MIS-HEMTs IC Platform
Author:
Affiliation:
1. School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou, China
2. School of Intelligent Manufacturing Ecosystem, Xi’an Jiaotong-Liverpool University, Suzhou, China
Funder
National Key Research and Development Program of China
Suzhou Science and Technology Program
Key Program Special Fund in XJTLU
XJTLU Research Development Funding
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/10049274/10097857.pdf?arnumber=10097857
Reference30 articles.
1. Monolithic integration design of GaN-based power chip including gate driver for high-temperature DC–DC converters
2. AlGaN/GaN dual gate MOS HFET for power device applications
3. Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs With Partially Recessed Gate and ZrOₓ Charge Trapping Layer
4. A Monolithically Integrated 2-Transistor Voltage Reference With a Wide Temperature Range Based on AlGaN/GaN Technology
5. 650 V 3.1 m?cm2 GaN-based monolithic bidirectional switch using normally-off gate injection transistor;morita;Proc IEEE Int Electron Devices Meeting,2007
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