A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}\hbox{/}\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ p-HEMTs-Reference-Cited by-同舟云学术

A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}\hbox{/}\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ p-HEMTs

Published:2008-07 Issue:7 Volume:55 Page:1577-1584
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kim Tae-Woo,Kim Dae-Hyun,Park Sang-Duk,Shin Seung Heon,Jo Seong June,Song Ho-Jin,Park Young Min,Bae Jeoun-Oun,Kim Young-Woon,Yeom Geun-Young,Jang Jae-Hyung,Song Jong-In

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4545026/04545038.pdf?arnumber=4545038

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